Scanning Tunneling Microscope Fabrication of Atomic-Scale Memory on a Silicon Surface
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概要
- 論文の詳細を見る
By using a scanning tunneling microscope (STM) operated in an ultrahigh vacuum, we can extract single Si atoms from predetermined positions of the Si(111)-7×7 surface through field evaporation. This technique enables us to create specific arrangements of Si vacancies on the surface. Some of the extracted Si atoms can be captured by the tip and redeposited onto the surface. We show that natural Si vacancy defects existing on the surface can be repaired by this technique. These results demonstrate the potential of STM for the construction of atomicscale data memory.
- 社団法人応用物理学会の論文
- 1994-02-01
著者
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Aono Masakazu
Aono Atomcraft Project Research Development Corporation Of Japan (jrdc):the Institute Of Physical An
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UCHIDA Hironaga
Aono Atomcraft Project, Research Development Corporation of Japan (JRDC)
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HUANG Dehuan
Aono Atomcraft Project, ERATO, JRDC
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Huang Dehuan
Aono Atomcraft Project Research Development Corporation Of Japan (jrdc)
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Huang Dehuan
Aono Atomcraft Project Erato Jrdc:yamamoto Quantum Fluctuation Project Erato Jrdc Ntt Musashino R &a
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Uchida Hironaga
Aono Atomcraft Project Research Development Corporation Of Japan (jrdc)
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Aono Masakazu
Aono Atomcarft Project Jrdc
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