Estimation of the Mobility-Lifetime Products in Amorphous Silicon in the Presence of Dispersive Transport

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概要

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• Applying the intuitive multiple trapping theory, we have calculated the time-of-flight (TOF) charge-collection μτ product, (μτ)_<cc>, under the condition of dispersive transport and find that (μτ)_<cc>=(1/α-α)μ_0τ_<fd>〓μ_0τ_<fd> where α is a temperature-dependent constant, μ_0 is the free-carrier mobility, and τ_<fd> is the TOF charge-collection free-carrier deep-trapping time. The steady-state photoconductivity μτ product, (μτ)_<ss>, is argued to be (μτ)_<ss>=μ_0τ_<fr> where τ_<fr> is the steady-state free-carrier recombination lifetime. As a result, (μτ)_<ss>/(μτ)_<cc>〓τ_<fr>/τ_<fd>. Our calculation shows that the presence of dispersive transport does not affect the ratio of (μτ)_<ss> and (μτ)_<cc>, and that the difference between (μτ)_<ss> and (μτ)_<cc> is due almost entirely to a difference between the free-carrier recombination lifetime in the steady state and the free-carrier deep-trapping time in the TOF charge-collection experiment. The origin of the difference between (μτ)_<ss> and (μτ)_<cc> is discussed.

• 社団法人応用物理学会の論文
• 1994-12-01

著者

• Zhou Jiang-huai

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

• Zhou Jiang-huai

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

関連論文

• Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
• Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
• Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
• Estimation of the Mobility-Lifetime Products in Amorphous Silicon in the Presence of Dispersive Transport

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