Reverse Biased Annealing Studies in Hydrogenated Amorphous Silicon Solar Cells

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概要

• 論文の詳細を見る

• The effect of reverse biased annealing treatment in a-Si:H solar cells has been studied by using reverse current voltage and forward capacitance-voltage measurements. The increase in reverse current at higher reverse biases in current-voltage characteristics and the anomalous peak in forward capacitance-voltage characteristics are attributed to the defect state at p-i interface. On the reverse biased annealing treatments, the reverse current as well as the peak in the forward capacitance decreases. This behaviour has been explained by passivation of the interface states, presumably due to hydrogen ions which are assisted by the applied electric field while annealing.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Dutta V

  Indian Inst. Technol. New Delhi Ind

• Murthy R

  Indian Inst. Technol. New Delhi Ind

• MURTHY R.

  Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology

• DUTTA V.

  Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology

• SINGH S.

  Amorphous Silicon Pilot Plant, Bharat Heavy Electrical Limited

• Singh S

  Amorphous Silicon Pilot Plant Bharat Heavy Electrical Limited

関連論文

• Role of Interface States in Temperature Dependence of Capacitance in Amorphous Silicon Solar Cells
• Reverse Biased Annealing Studies in Hydrogenated Amorphous Silicon Solar Cells

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