Role of Interface States in Temperature Dependence of Capacitance in Amorphous Silicon Solar Cells

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概要

• 論文の詳細を見る

• The temperature dependent variation of capacitance in amorphous silicon solar cells is found to have different behaviours at low frequency (100 Hz). The variation at high temperature has been shown to arise due to the interface states at p-i junction. The density of states at p-i junction and in the whole i-region have been estimated to be 7×10^<16> eV^<-1> cm^<-3> and 5×10^<16> eV^<-1> cm^<-3>, respectively, in as-deposited samples. The effect of the reverse biased annealing on the interface states has been observed.

• 社団法人応用物理学会の論文
• 1995-11-15

著者

• Dutta V

  Indian Inst. Technol. New Delhi Ind

• Murthy R

  Indian Inst. Technol. New Delhi Ind

• MURTHY R.

  Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology

• DUTTA V.

  Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology

• SINGH S.

  Amorphous Silicon Pilot Plant, Bharat Heavy Electrical Limited

• Singh S

  Amorphous Silicon Pilot Plant Bharat Heavy Electrical Limited

関連論文

• Role of Interface States in Temperature Dependence of Capacitance in Amorphous Silicon Solar Cells
• Reverse Biased Annealing Studies in Hydrogenated Amorphous Silicon Solar Cells

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