Strategy for Off-Current Suppression in Thin-Film Transistors

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概要

• 論文の詳細を見る

• Field induced trap assisted band-to-band tunneling in poly-silicon thin-film transistors is studied using a two-dimensional model. Both the space dependence and the effect of graded doping are investigated. A graded doping profile results in a moderate reduction in the current, while a much larger reduction is achieved by increasing the thickness of the gate oxide near the drain region. In this way, the on/off ratio of the thin-film transistor should be greatly improved.

• 社団法人応用物理学会の論文
• 1999-12-15

著者

• Alphenaar B

  日立ヨーロッパltd.

• Muller Heinz-olaf

  Hitachi Cambridge Laboratory

• ALPHENAAR Bruce

  Hitachi Cambridge Laboratory

関連論文

• Coulomb Blockade and Disorder in 2D Quantum Dot Arrays
• Strategy for Off-Current Suppression in Thin-Film Transistors

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