Submicron Imaging at 248.3 NM : A Lithographic Performance Review of an Advances Negative Resist Designed for low "K_1" Processing : Resist Material and Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-12-30

著者

• Petersen John

  Shipley Microelectronics Ltd. Technical Service Group

関連論文

• Submicron Imaging at 248.3 NM : A Lithographic Performance Review of an Advances Negative Resist Designed for low "K_1" Processing : Resist Material and Process

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