MBE Grown GaSb, AlSb Crystals High Pressure Electrical Characterisation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Mercy J-m.
G.e.s. Universite De Montpellier Ii
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Konczewicz L.
High Pressure Research Center "unipress" Polish Ac.sci.
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ROBERT J-L.
G.E.S. Universite de Montpellier II
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DOBACZEWSKI L.
Dept. of Electronics Materials
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PEAKER A.R.
Dept. of Electronics Materials
関連論文
- Can One Microscopic Model Explain the Different Behavior of Si- and Te- Related DX Centers in AlGaAs?
- MBE Grown GaSb, AlSb Crystals High Pressure Electrical Characterisation