Can One Microscopic Model Explain the Different Behavior of Si- and Te- Related DX Centers in AlGaAs?
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Litwin-staszewska E.
High Pressure Research Center Unipress Polish Academy Of Sciences
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PITRZKOWSKI R.
High Pressure Research Center UNIPRESS, Polish Academy of Sciences
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KONCZEWICZ L.
High Pressure Research Center UNIPRESS, Polish Academy of Sciences
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ROBERT J.
GES, Unviersite Montpellier II
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Konczewicz L
High Pressure Research Center Unipress Polish Academy Of Sciences:ges Unviersite Montpellier Ii
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Konczewicz L.
High Pressure Research Center "unipress" Polish Ac.sci.
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Pitrzkowski R.
High Pressure Research Center Unipress Polish Academy Of Sciences
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Robert J.
Ges Unviersite Montpellier Ii
関連論文
- Can One Microscopic Model Explain the Different Behavior of Si- and Te- Related DX Centers in AlGaAs?
- MBE Grown GaSb, AlSb Crystals High Pressure Electrical Characterisation