Characteristics of Hydrogenated Amorphous Silicon Films Prepared by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition Method and Their Application to Photodiodes

スポンサーリンク

概要

• 論文の詳細を見る

• The electron cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) method has been applied to prepare a-Si:H films. A high deposition rate of 136 nm/min was achieved. Even without substrate heating and with the high deposition rate, a-Si:H films prepared by ECRPCVD have sufficient characteristics, as follows: the dark conductivity is 3-4×10^<-10>S/cm, ημτ is 4.2×10^<-5>cm^2/V and the optical band-gap is 1.81 eV. Furthermore, the electric characteristics are somewhat improved with substrate heating. Hydrogenated amorphous silicon films prepared by ECRPCVD without substrate heating and with a high deposition rate of 136 nm/min have been applied to ITO/a-Si:H/Cr Schottky-barrier photodiodes. These photodiodes have sufficient characteristics to be applied to image sensors for a facsimile reader and other systems.

• 社団法人応用物理学会の論文
• 1987-02-20

著者

• KOBAYASHI Kazuhiro

  Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation

• MIKI Hidejiro

  Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation

• HAYAMA Masahiro

  Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation

• Hayama M

  Mitsubishi Electric Corp. Hyogo

• Kobayashi Kazuhiro

  Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation

• KAWAMOTO Satoru

  Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation

• Kawamoto Satoru

  Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation

関連論文

• A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
• Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
• Numerical Analysis of the Optical Response Characteristics of Thin Film Transistor Addressed Liquid Crystal Displays
• Characteristics of Hydrogenated Amorphous Silicon Films Prepared by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition Method and Their Application to Photodiodes

スポンサーリンク