Reduction and Sintering of Vanadium Oxide Films by Laser-Beam Irradiation

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概要

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• V_2O_5 films printed on alumina substrates were reduced and sintered to form film devices by a 2 ms irradiation process using a beam from a relaxation-oscillating ruby laser in an air atmosphere. These devices possess electrical characteristics of a metal-semiconductor transition at 68℃, referred to as VO_2. Their X-ray powder diffraction patterns prove that they consist mainly of VO_2. This process is useful for making a VO_2 element at a specified location on a device.

• 社団法人応用物理学会の論文
• 1987-10-20

著者

• Sasaki Yoshiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Mitsuishi Tomokuni

  Department Of Management And Information Science Jobu University

• OKABE Katsuya

  Faculty of Engineering, Gunma University

• SASAKI Yosisato

  Faculty of Engineering, Gunma University

• Okabe Katsuya

  Faculty Of Engineering Gunma University

• Sasaki Y

  Faculty Of Engineering Gunma University

関連論文

• Second-Order Raman Spectra of Nanostructures
• Electroabsorption and Electroluminescence of GaSe
• Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
• Electroreflectance of GaSe. I. : Around 3.4 eV
• Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
• Electrical Conduction and Switching in Amorphous Semiconductors
• Gas-Evaporated Small InSb Particles with the Wurtzite Structure
• Electroabsorption of GaS around the Indirect Edge
• Raman Scattering of Gas-Evaporated Ge with a Structure Other Than the Diamond Lattice
• Reduction and Sintering of Vanadium Oxide Films by Laser-Beam Irradiation

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