A CCD Imager on Three Types of P-Wells
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-05-20
著者
-
Ogawa Shin-ichi
Engineering Center Sharp Corporation
-
OGAWA Souichi
Technology Research Institute of Osaka Prefecture
-
Matsui Osamu
Engineering Center Sharp Corporation
-
Nakai Jun-ichi
Engineering Center Sharp Corporation
-
Fujino Kozo
Engineering Center Sharp Corporation
-
MIYATAKE Shigehiro
Engineering Center, Sharp Corporation
-
NAGAKAWA Tadashi
Engineering Center, Sharp Corporation
-
MISAWA Kiyotoshi
Engineering Center, Sharp Corporation
-
KOSAZA Harumi
Engineering Center, Sharp Corporation
-
SAKAMATO Shoji
Engineering Center, Sharp Corporation
-
YAMANO Toshiaki
Engineering Center, Sharp Corporation
-
IIKAWA Kanpei
Engineering Center, Sharp Corporation
-
AWANE Katsunobu
Engineering Center, Sharp Corporation
-
Kosaza Harumi
Engineering Center Sharp Corporation
-
Iikawa Kanpei
Engineering Center Sharp Corporation
-
Sakamato Shoji
Engineering Center Sharp Corporation
-
Yamano Toshiaki
Engineering Center Sharp Corporation
-
Awane Katsunobu
Engineering Center Sharp Corporation
-
Misawa K
Univ. Tokyo Tokyo Jpn
-
Nagakawa Tadashi
Engineering Center Sharp Corporation
-
Miyatake S
Minolta Co. Ltd. Osaka Jpn
関連論文
- In Situ Formation of Ohmic Contact Electrodes of Cu and Ag onto the Fractured Surface of (Bi, Pb)-Sr-Ca-Cu-O Ceramics
- Possibility of Analyzing the Type of Impurities in Semiconductors by Application of Bistability in Luminescence
- Infrared Radiation Detector with YBa_2Cu_3O_x Thin Film
- Effects of Nitrogen Pressure and RF Power on the Properties of Reactive Magnetron Sputtered Zr-N Films and an Application to a Thermistor
- Synthesis of Zr-N Thin Film by Reactive Ion Beam Sputtering
- Fabrication of Bi(Pb)SrCaCuO Thin Film of High-T_c Phase
- Overwrite on Sputtered Garnet Media Using Magnetic Field Modulation : Media
- Overwrite on Sputtered Garnet Media Using Magnetic Field Modulation
- A CCD Imager on Three Types of P-Wells
- Transmittance Bistability of CdS at 632.8 nm Induced by the 514.5 nm Line