Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy

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概要

• 論文の詳細を見る

• A new surface-cleaning process for Si-MBE, termed Si-beam radiation cleaning (Rad clean), and a model of the cleaning process have been examined. Epitaxial Si layers of high quality have been obtained as a result of the formation of aninactive, very clean natual oxide, removal of this oxide together with contaminants slightly adsorbed on it, and dispersion of remaining contaminants without their developing into defect nuclei.Epitaxial Si layers with etch pit densities of less than 10^3/cm^2 have reproducibly been obtained by carrying out growthat 500℃ following the Rad clean process at 800℃ for 2 min.

• 社団法人応用物理学会の論文
• 1985-05-20

著者

• Matsuo Naoto

  Central Research Laboratory Matsushita Electric Ind. Co. Ltd.

• Hirofuji Yuichi

  Central Research Laboratory Matsushita Electric Ind. Co. Ltd.

• KUGIYAMA Koichi

  Central Research Laboratory, Matsushita Electric Ind. Co., Ltd.

• Kugiyama Koichi

  Central Research Laboratory Matsushita Electric Ind. Co. Ltd.

• HIROFUJI Yuichi

  Central Research Laboratory, Matsushita Electric Ind. Co., Ltd.

関連論文

• H_2-Enhanced Epitaxial Regrowth of Polycrystalline Silicon through Natural Oxide Layers on Silicon Substrates
• Si-Beam Radiation Cleaning in Molecular-Beam Epitaxy

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