Simple Method of Calculating Phonon-Assisted Auger Recombination Rate in Direct-Gap Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る

• A simple but approximate method is developed for calculating the phonon-assisted Auger recombination rate indirect-gap semiconductors, whose analysis is rigorously based on the Green's function formalism. The method is especially useful for analyzing loss mechanisms in a semiconductor laser which is made of a nondoped or amoderately doped layer. The usefulness of the method is demonstrated though the rigorous and the approximate calculations for typical materials GaAs, Ink, GaSb and Inks. The condition, under which the early theory based on the second-order perturbation treatment is useful, shows up through a characteristic function. A brief discussion is also given of experiments.

• 社団法人応用物理学会の論文
• 1983-03-20

著者

• Takeshima Masumi

  Semiconductor Laboratory Matsushita Electronics Corporation

関連論文

• Simple Method of Calculating Phonon-Assisted Auger Recombination Rate in Direct-Gap Semiconductors
• Intervalence-Band Absorption in Relation to Auger Recombination in Laser Materials

スポンサーリンク