Intervalence-Band Absorption in Relation to Auger Recombination in Laser Materials

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概要

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• A theory is presented for the intervalence-band absorption on the basis of the Green's function formalism, in which the electronic level broadening due to the phonon and ionized-impurity scatterings is taken into account. The theory is examined using experimental data of the absorption coefficient for p-type GaAs. The theory is then applied to In_<1-x>Ga_xAs_yP_<1-y>, giving the absorption coefficients useful for analyzing laser operations. It is shown that temperature dependence of the absorption, assisted by the scattering processes, is much weaker than that of pure absorption which has been considered in almost all previous analyses. A close relation between the absorption cross section and the Auger coefficient is derived and it is shown that experimental values of the absorption cross section and the Auger coefficient can be explained with the present theory.

• 社団法人応用物理学会の論文
• 1984-04-20

著者

• Takeshima Masumi

  Semiconductor Laboratory Matsushita Electronics Corporation

関連論文

• Simple Method of Calculating Phonon-Assisted Auger Recombination Rate in Direct-Gap Semiconductors
• Intervalence-Band Absorption in Relation to Auger Recombination in Laser Materials

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