Barrier Height of Metal/InP Schottky Contacts with Interface Oxide Layer : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-06-20

著者

• Yamagishi Haruo

  Microwave Solid-state Department Komukai Works Toshiba Corporation

• Yamagishi Haruo

  Microwave Solid-state Department Komukai Workd Toshiba Corporation

• Yamagishi H

  Musashi Inst. Technology Tokyo

関連論文

• Barrier Height of Metal/InP Schottky Contacts with Interface Oxide Layer : Semiconductors and Semiconductor Devices
• Characterization of WN_x/GaAs Schottky Contacts Formed by Reactive RF Sputtering
• An/TaN/WN/GaAs Structure Schottky Gate Formation for Self-Aligned GaAs MESFET
• Thermal Oxidation of Sputtered TaN Films and Properties of the Oxidized Films
• Schottky Contacts on n-InP Surface Treated by Plasma-Induced Oxygen Radicals

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