Undoped Semi-Insulating GaAs of Very Low Residual Acceptor Concentration : Semiconductors and Semiconductor Devices

概要

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We have studied undoped GaAs of shallow acceptor concentrations close to and below 5・10^<14>cm^<-3>. After ingot annealing with slow cooling rate this material shows resistivity values below 10^7Ωcm, spanning several orders of magnitude. By an additional annealing procedure these values can be raised to some 10^7Ωcm. DLTS results are presented indicating that the electrical characteristics in the ingot annealed state are governed by uncompensated deep donor shallower than EL2, mainly EL6 near E_c -0.35eV. After the additional annealing a drastic decrease in EL 6 concentration is observed, which explains the rise in resistivity. This is confirmed by theoretical calculation of the resisivity in dependence of the EL2 and EL6 to net acceptor compensation ratio, which agrees quantitatively with the experimental values
社団法人応用物理学会の論文
1988-12-20