Dependence of GaAs Ion-Implanted Layer Characteristics on Substrate Resistivity and Residual Acceptor Concentration

概要

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The properties of ion-implanted layers in undoped s.i. GaAs substrates have been studied and found to be correlated to the initial bulk resistivity of the wafers, which in turn is determined by the content of residual shallow acceptors. With decreasing resistivity from ≳10^8 Ωcm to ≲10^7 Ωcm the implanted layer sheet resistance decreases, the pinch-off voltage increases and the carrier profiles become broader. High purity material with very low background acceptor concentration shows highest carrier activation and superior reproducibility and appears to be favourable for ion-implantation applications. The results are in agreement with the substrate barrier model.
社団法人応用物理学会の論文
1990-01-20