The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors : Semiconductors and Semiconductor Devices

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概要

• 論文の詳細を見る

• It is shown that the sub-threshold characteristics of polysilicon transistors are well described by a model which assumes an exponential gap state density, similar to the ones used for hydrogenated amorphous silicon. The model leads to analytical expressions that give a very good fitting of the experimental data. In contrast, a model based on a simple monoenergetic trap level can in no way account for the observed I_D-V_G characteristics.

• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Fortunato G.

  Istituto Di Elettronica Dello Stato Solido

• Meakin D.

  Istituto Di Elettronica Dello Stato Solido

• MIGLIORATO P.

  GEC Research Limited, Hirst Research Centre

• Migliorato P

  Cambridge Univ. Cambridge Gbr

関連論文

• The Sub-Threshold Characteristics of Polysilicon Thin-Film-Transistors : Semiconductors and Semiconductor Devices
• Theoretical Analysis of a-Si:H Based Multilayer Structure Thin Film Transistors

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