a-Si:H Deposition from SiH_4 and Si_2H_6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition : Surfaces, Interfaces and Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-11-20

著者

• Cabarrocas Pere

  Laboratoire De Physique De Interfaces Et Des Couches Minces

• Perrin Jerome

  Laboratoire De Physique De Interfaces Et Des Couches Minces

• Allain Bruno

  Laboratoire De Physique De Interfaces Et Des Couches Minces

• Friedt Jean-marie

  L'air Liquide Centre De Recherche Claude-delorme

関連論文

• Mass Spectrometry Detection of SiH_m and CH_m Radicals from SiH_4-CH_4-H_2 RF Discharges under High Temperature Deposition Conditions of Silicon Carbide ( Plasma Processing)
• a-Si:H Deposition from SiH_4 and Si_2H_6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition : Surfaces, Interfaces and Films

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