Novel 1.3-μm High T_0 AlGaInAs/InP Strained-Compensated Multi-Quantum Well Complex-Coupled Distributed Feedback Laser Diode
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概要
- 論文の詳細を見る
A 1.3-μm AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T_0 = 90 K between 20-80°) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80℃) in 1.3 μm AlGaInAs/InP DFB lasers was obtained by introducing Al(Ga)InAs graded-index separate confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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Wang Wei
National Center for Natural Products Research, Research Institute of Pharmaceutical Sciences, Univer
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Wang Xiao-jie
National Research Center For Optoelectronics Technology Institute Of Semiconductors Chinese Academy
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Chen Bo
National Research Center for Optoelectronics Technology, Institute of Semiconductors, Chinese Academ
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Zhang Jin-Yuan
National Research Center for Optoelectronics Technology, Institute of Semiconductors, Chinese Academ
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Fan Zhou
National Research Center for Optoelectronics Technology, Institute of Semiconductors, Chinese Academ
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Fan Zhou
National Research Center For Optoelectronics Technology Institute Of Semiconductors Chinese Academy
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Zhang Jin-yuan
National Research Center For Optoelectronics Technology Institute Of Semiconductors Chinese Academy
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Chen Bo
National Research Center For Optoelectronics Technology Institute Of Semiconductors Chinese Academy
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Wang Wei
National Research Center For Optoelectronics Technology Institute Of Semiconductors Chinese Academy
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