High-Speed and High-Power 1.3 μm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions
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概要
- 論文の詳細を見る
High-speed and high-power InGaAsP/InP selective proton-bombarded buried crescent (SPB-BC) lasers with optical field attenuation regions were reported. The defect of proton bombardment can not affect the lifetime of the SPB-BC laser because the optical field attenuation region obstructs the growth and propagation of defects. A CW light output over 115 mW was achieved at room temperature using a 500 μm long cavity SPB-BC laser. The 3 dB bandwidth was 8.5 GHz, and the lifetime was about 8.5×10^5 h. The capacitance of four kinds of current blocking structures was first measured in our experiment, and the results shown that the capacitance of proton-bombarded pnpn structure was not only less than that of pnpn current blocking structure, but also less than that of semi-insulating Fe-InP structure.
- 社団法人応用物理学会の論文
- 1999-12-15
著者
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Wang Wei
National Center for Natural Products Research, Research Institute of Pharmaceutical Sciences, Univer
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Song Junfeng
Department Of Electronic Engineering And State Key Laboratory On Integrated Optoelectronics Jilin Un
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Zhang Baijun
National Research Center For Optoelectronic Technology Institute Of Semiconductor Chinese Academy Of
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YI Maobin
Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics, Jilin U
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GAO Dingsan
Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics, Jilin U
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ZHU Ninghua
National Research Center for Optoelectronic Technology, Institute of Semiconductor, Chinese Academy
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WU Ronghan
National Research Center for Optoelectronic Technology, Institute of Semiconductor, Chinese Academy
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Yi Maobin
Department Of Electronic Engineering And State Key Laboratory On Integrated Optoelectronics Jilin Un
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Wu Ronghan
National Research Center For Optoelectronic Technology Institute Of Semiconductor Chinese Academy Of
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Gao Dingsan
Department Of Electronic Engineering And State Key Laboratory On Integrated Optoelectronics Jilin Un
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Zhu Ninghua
National Research Center For Optoelectronic Technology Institute Of Semiconductor Chinese Academy Of
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