Ordering of Germanium Clusters During Epitaxy on Patterned Silicon Substrates

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概要

• 論文の詳細を見る

• Semiconductor surfaces have been patterned by a novel method based on the growth of metal clusters directly on the surface as masks for subsequent low energy ion beam modification. During subsequent wet etching, well-defined mesa structures were obtained. When these are overgrowth with 5 to 50 monolayers of germanium, field emission scanning electron microscopy shows growth of crystallographically ordered Ge clusters not only on the substrate between the mesas but also on the slopes of the mesas. The latter clusters show a distinct orientational correlation, and ordering in size and nearest neighbor distance.

• 社団法人応用物理学会の論文
• 1999-09-15

著者

• Zinke‐allmang M

  Univ. Western Ontario On Can

• Zinke-allmang Martin

  Department Of Physic And Astronomy University Of Western Ontario

関連論文

• Size-tunable Ge Nano-particle Arrays Patterned on Si Substrates with Nanosphere Lithography and Thermal Annealing
• Ordering of Germanium Clusters During Epitaxy on Patterned Silicon Substrates

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