Static and Dynamic Characteristics of a 54 GHz f_<max> Implanted Base 0.35 μm Single-Polysilicon Bipolar Technology

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概要

• 論文の詳細を見る

• High performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 μm bipolar technology have been fabricated, and the electrical properties related to physical and technological parameters. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.

• 社団法人応用物理学会の論文
• 1999-11-15

著者

• Niel S

  France Telecom Meylan Fra

• Vincent Gilbert

  Universite Joseph Fourier Ufr Physique

• Llinares Pierre

  Sgs Thomson Microelectronics

• CHANTRE Alain

  France Telecom, CNET Grenoble

• NIEL Stephan

  France Telecom, CNET Grenoble

• ROZEAU Olivier

  France Telecom, CNET Grenoble

• Chantre A

  France Telecom Meylan Fra

• Rozeau O

  Lpcs Grenoble Fra

関連論文

• Static and Dynamic Characteristics of a 54 GHz f_ Implanted Base 0.35 μm Single-Polysilicon Bipolar Technology
• The Design and Fabrication of 0.35 μm Single-Polysilicon Self-Aligned Bipolar Transistors
• Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors

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