Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors

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概要

• 論文の詳細を見る

• We present a detailed investigation, in the temperature range between 340 K and 80 K, of the static properties of advanced single-polysilicon bipolar transistors covering a wide range of base doping concentrations. Special attention is paid to the temperature dependence of the intrinsic current gain β. We find that the rate of degradation of β with temperature below about 150 K is nearly independent of the peak or average base doping concentration. Our data do not match the conventional theory of the temperature dependence of β using available band-gap narrowing models for p-type silicon. We show that these, as well as other recently published related results, can be understood considering the importance of profile tail regions in controlling the operation of bipolar transistors at low temperature.

• 社団法人応用物理学会の論文
• 1993-12-15

著者

• CHANTRE Alain

  France Telecom, CNET Grenoble

• Chantre A

  France Telecom Meylan Fra

• NOUAILHAT Alain

  CNS

• Nouailhat A

  Centre National D'etudes Telecommunications Meylan Fra

関連論文

• Static and Dynamic Characteristics of a 54 GHz f_ Implanted Base 0.35 μm Single-Polysilicon Bipolar Technology
• The Design and Fabrication of 0.35 μm Single-Polysilicon Self-Aligned Bipolar Transistors
• Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors

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