Hole Trapping in Molecularly Doped Polymers: The Hoesterey-Letson Formalism

概要

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Hole trapping has been investigated in di-p-anisyl-p-tolylamine (DAT), tri-p-tolylamine (TTA), di-p-tolylphenylamine (DTP), and diphenyl-p-tolylamine (DPT) doped poly (styrene) containing different concentrations of tri-p-anislyamine (TAA). From oxidation potential measurements, TAA is a trap for DAT, TTA, DTP, and DPT with depths 0.07, 0.22, 0.27, and 0.34 eV, respectively. In such a way, it is possible to investigate the effect of trap depth using the same trap molecule. The mobilities decrease with increasing trap depth and concentration. For a TAA molar concentration of 10^<-2>, the room temperature mobilities are suppressed by as much as four orders of magnitude. The results are compared to predictions of the Hoesterey-Letson formalism and discussed within the framework of the recent simulations of Wolf et al. [Chem. Phys. 222 (1997) 259] and Borsenberger et al. (submitted to Chem. Phys.)
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1999-01-15