Hole Transport in Triphenylmethane Doped Polymers

概要

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Hole mobilities have been measured in poly(styrene) (PS) doped with a series of triphenylmethane (TPM) derivatives with different dipole moments. The results are described by a formalism based on disorder, due to Bassler and coworkers. The formalism is premised on the assumption that charge transport occurs by hopping through a manifold of localized states that are distributed in energy. A key parameter of the formalism is the energy width of the hopping site manifold. For TPM doped PS, the widths are between 0.106 and 0.l17eV,increasing with increasing dipole moment. The widths are described by a model based on dipolar disorder. The model is based on the assumption that the total width is comprised of a dipolar component and a van der Waals component. For TPM doped PS, the dipolar components are between 0.021 and 0.052eV while the van der Waals components are 0.105 eV. The van der Waals components are significantly larger than for PS doped with a wide range of triarylamine (TAA) molecules. The difference in Line van der Waals component is described by a charge delocalization argument and is the principal reason for the difference in mobility of TPM and TAA doped polymers.
社団法人応用物理学会の論文
1996-05-15