Growth of PbTiO_3 Thin Film on Si(100) with Y_2O_3 and CeO_2 Buffer Layer

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概要

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• The PbTiO_3 thin film was deposited on Si(100) with Y_2O_3 and CeO_2 buffer layers. Y_2O_3, CeO_2 and PbTiO_3 layers were fabricated by the in-situ pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analysis revealed that the Y_2O_3 and CeO_2 layers were (222) and (200) preferential orientation, respectively. PbTiO_3 showed (100)+(001) mixed texture on CeO_2/Si and polycrystalline on Y_2O_3/Si, respectively. Characterization of the grazing angle incident X-ray diffraction showed that the stress depth profile of the PbTiO_3 thin film on CeO_2/Si(100) was not uniform. The secondary ion mass spectroscopy (SIMS) analysis indicated that the CeO_2 and Y_2O_3 layers reduced significantly the interdiffusion of Si atoms into PbTiO_3 and that the distributions of Pb and Ti elements were uniform throughout the PbTiO_3 layer. The columnar crystallization of CeO_2, Y_2O_3, and PbTiO_3 films were observed by scanned electron microsopy (SEM).

• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Wu Ye-min

  Department Of Materials Engineering Tatung Institute Of Technology

• Lo Jyi-tsong

  Department Of Materials Engineering Tatung Institute Of Technology

関連論文

• Dielectric Properties of PbTiO_3 Thin Films on CeO_2/Si(100) and Y_2O_3/Si(100)
• Growth of PbTiO_3 Thin Film on Si(100) with Y_2O_3 and CeO_2 Buffer Layer

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