Dielectric Properties of PbTiO_3 Thin Films on CeO_2/Si(100) and Y_2O_3/Si(100)

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概要

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• The lead titanate (PbTiO_3) thin films were deposited on a Si(100) substrate with cerium oxide (CeO_2) and yttrium oxide (Y_2O_3) buffer layers by the pulsed laser deposition technique. The CeO_2/Si and Y_2O_3/Si thin films fabricated at 760℃ in an oxygen pressure of 0.04 Torr showed CeO_2(200) and Y_2O_3(222) preferential orientation, respectively. The C-V and J-E analyses of Au/CeO_2/Si, Au/Y_2O_3/Si, Au/PbTiO_3/CeO_2/Si and Au/PbTiO_3/Y_2O_3/Si thin films were carried out. The analyses results indicated that the dielectric constant of the PbTiO_3 layer increased with the thickness of buffered CeO_2 and Y_2O_3. The threshold voltage change (V_<th>) was about 3.6V and 5V for Au/PbTiO_3(150nm)/CeO_2(l00nm)/Si and Au/PbTiO_3(150nm)/Y_2O_3(100nm)/Si MIS capacitors, respectively. For the same current density of 100nA/cm^2, the applied fields were about 380kV/cm and 400kV/cm for PbTiO_3(80nm)/CeO_2(20nm)/Si and PbTiO_3(80nm)/Y_20_3(20nm)/Si thin films, respectively. The densities of surface states of Au/CeO_2(100nm)/Si and Au/Y_2O_3(100nm)/Si interfaces estimated at 1 MHz were 6.6 × 10^<11>/cm^2eV and 3.7 × 10^<11>/cm^2eV, respectively.

• 社団法人応用物理学会の論文
• 1998-10-15

著者

• Wu Y‐m

  Department Of Materials Engineering Tatung Institute Of Technology

• Wu Ye-min

  Department Of Materials Engineering Tatung Institute Of Technology

• Lo J‐t

  Department Of Materials Engineering Tatung Institute Of Technology

• LO Jyi-Tsong

  Department of Materials Engineering, Tatung Institute of Technology

• Lo Jyi-tsong

  Department Of Materials Engineering Tatung Institute Of Technology

関連論文

• Dielectric Properties of PbTiO_3 Thin Films on CeO_2/Si(100) and Y_2O_3/Si(100)
• Growth of PbTiO_3 Thin Film on Si(100) with Y_2O_3 and CeO_2 Buffer Layer

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