Analysis of InGaN High-Brightness Light-Emitting Diodes

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概要

• 論文の詳細を見る

• InGaN high-brightness light-emitting diodes (LEDs) have been analyzed. The analysis, based on non-absorbing ohmic electrode model, shows that InGaN LEDs have an extremely wide escape cone solid angle which is about 2.8 times that in conventional high-brightness LEDs. As a result, the external quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• 社団法人応用物理学会の論文
• 1998-11-15

著者

• Lee Song

  Electronics Engineering Department Chungnam National University

関連論文

• Analysis of InGaN High-Brightness Light-Emitting Diodes
• Design Rules for High-Brightness Light-Emitting Diodes Grown on GaAs Substrate

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