Design Rules for High-Brightness Light-Emitting Diodes Grown on GaAs Substrate

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概要

• 論文の詳細を見る

• By applying the escape cone concepts, basic design rules for high-brightness AlGaAs or InGaAlP light-emitting diodes (LEDs) have been derived and, in addition, their photon output coupling efficiency have been estimated. Based on the design rules, some of the important structures developed thus far have also been evaluated. The design rules that are expressed in relatively simple forms can also be applied to Ga(As)P LEDs based on either homojunction or single heterojunction, except the InGaN LEDs that are usually grown on sapphire substrate.

• 社団法人応用物理学会の論文
• 1998-02-15

著者

• Lee Song

  Electronics Engineering Department Chungnam National University

関連論文

• Analysis of InGaN High-Brightness Light-Emitting Diodes
• Design Rules for High-Brightness Light-Emitting Diodes Grown on GaAs Substrate

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