Ultrafast Relaxation of Photoexcited Carriers in Semiconductor Superlattices

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概要

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• The differential transmission signal (DTS) of a pump-probe transmission experiment on the GaAs/AlGaAs superlattice is calculated using the effective semiconductor Bloch equation and by assuming that the main mechanism of the relaxation for a low carrier density is the carrier LO-phonon scattering. From the theoretical analysis of the DTS signal, the intrasubband and intersubband relaxation times of the carriers which are excited optically to the second miniband are estimated. The results are compared to those of recent femtosecond pump-probe experiments on the GaAs/AlGaAs superlattice.

• 社団法人応用物理学会の論文
• 1998-10-15

著者

• Je Koo-chul

  Department Of Physics And Research Institute For Basic Sciences Kyung-hee University

• KIM Yup

  Department of Physics and Research Institute for Basic Sciences, Kyung-Hee University

• Kim Yup

  Department Of Physics And Research Institute For Basic Sciences Kyung Hee University

関連論文

• Ultrafast Relaxation of Photoexcited Carriers in Semiconductor Superlattices
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• Correlation Functions and Queuing Phenomena in Growth Processes with Drift(General)
• Growth Equation for a Simple Vapor Deposition Model

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