The Electronic Behaviors of Oxygen-Deficient VO_2 Thin Films in Low Temperature Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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WADA Hideo
Second Research Center, Techaical Research and Development Institute, Japan Defense Agency
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Wada Hideo
Second Research Center Trdi Japan Defense Agency
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NAGASHIMA Mitsuhiro
Second Research Center, TRDI, Japan Defense Agency
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TANIKAWA Kunihiro
Second Research Center, TRDI, Japan Defense Agency
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SHIRAHATA Hiromichi
Second Research Center, TRDI, Japan Defense Agency
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Tanikawa K
Second Research Center Trdi Japan Defense Agency
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Nagashima Mitsuhiro
Second Research Center Trdi Japan Defense Agency
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Shirahata H
Second Research Center Trdi Japan Defense Agency
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Shirahata Hiromichi
Second Research Center Japan Defense Agency
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Wada Hideo
Second Department Of Internal Medicine Mie University School Of Medicine
関連論文
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- Bi-Substitution Effect in La-Sr-Mn-O Thin Films for Bolometric Applications : Surfaces, Interfaces, and Films
- Bismuth-Substituted Lanthanum Manganite for Bolometric Applications
- The Electronic Behaviors of Oxygen-Deficient VO_2 Thin Films in Low Temperature Region
- Studies of the Oxygen Deficiency Effect in La_Ca_xMnO_z Using X-ray Photoelectron Spectroscopy
- Highly Increased Plasma Concentrations of the Nicked Form of β_2 Glycoprotein I in Patients with Leukemia and with Lupus Anticoagulant: Measurement with a Monoclonal Antibody Specific for a Nicked Form of Domain V
- Nonlinear IR Generation in AgGaS2
- Highly Increased Plasma Concentrations of the Nicked Form of .BETA.2 Glycoprotein I in Patients with Leukemia and with Lupus Anticoagulant. Measurement with a Monoclonal Antibody Specific for a Nicked Form of Domain V.