Fabrication of Twin Nano Silicon Wires Based on Arsenic Dopant Effect
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Tang Xiaohui
Universite Catholique De Louvain Dice
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Tang Xiaohui
Universite Catholique De Louvain
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Colinge Jean-pierre
Universite Catholique De Louvain Dice
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BAIE Xavier
Universite Catholique de Louvain DICE
関連論文
- Fabrication of Twin Nano Silicon Wires Based on Arsenic Dopant Effect
- Fabrication Process of Si Memory Dot and Quantum Channel Based on As Dopant Statistical Distribution Effect