Phase Diagram for Metalorganic Vapor Phase Epitaxy of Strained and Unstrained InGaAsP/InP

概要

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The composition parameters x and y of In_<1-x>Ga_xAs_yP_<1-y>/InP grown by low-pressure metalorganic vapor phase epitaxy (MOVPE) have been extracted from photoluminescence and X-ray diffraction by an iterative analysis using an improved gap energy function E_g(x, y) with strain correction. These x and y values were confirmed by electron probe microanalysis. Phase diagrams (vapor-solid relations) between the input partial pressures of the precursors and x and y have been established, which are linear for both the group-III and group-V elements. These simple functions are very useful for practical applications. The temperature and pressure dependences of the ratios of the distribution coefficients K_<In>/K_<Ga> and K_P/K_<As> were measured for two different Ga precursors (TMGa and TEGa). The growth rate of InGaAsP was calculated as a function of composition, and good agreement with the measurements was found. An analysis of strongly strained (&lr;1.3%) InGaAsP layers shows that the above established function E_g(x, y) and the vapor-solid relations are valid not only for nearly unstrained, but also for strongly strained compositions. The vapor pressure of TMIn was measured.
社団法人応用物理学会の論文
1998-02-15