Preparation of High-Quality Undoped Microcrystalline Silicon with High Deposition Rate Using Mercury-Sensitized Photochemical Vapor Deposition Method

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We prepared undoped microcrystalline silicon films (μc-Si : H) using a mercury-sensitized photochemical vapor deposition system under various film deposition conditions of SiH_4/(SiH_4 + H_2) gas ratio and total gas flow rate, and investigated the dependence of the film quality on the deposition conditions in order to obtain high-quality undoped microcrystalline films at a high deposition rate. Up to a SiH_4/(SiH_4 + H_2) gas ratio of 〜 0.1, the crystallite size of the μc-Si : H films decreased linearly as the ratio increased, but the volume fraction of crystallites remained constant at about 80%. The dark conductivity of the films was very low, in the range of 10^<-7>-10^<-6>Scm^<-1> under nearly all experimental conditions, and so a high photosensitivity of 〜 550 was obtained without the addition of a dopant gas such as diborane. In addition, a high deposition rate of 〜 30 Å/min was obtained at a low total flow rate of 21 sccm. No degradation of the microcrystallinity was observed for the low total flow rate.
社団法人応用物理学会の論文
1996-11-15