Zinc Nanodots Formation by Low-Temperature Photo Metal-Organic Chemical Vapor Deposition Method for Memory Application
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概要
- 論文の詳細を見る
Zinc (Zn) nanodots on thermally grown silicon oxide have been fabricated at low temperature using the photo metal-organic chemical vapor deposition (photo-MOCVD) technique. Metal nanodots for memory application by MOCVD method is suggested for the first time. Even at the low temperature of 150 °C, Zn nanodots are successfully deposited by this method. By changing the carrier gas (argon) and the chamber pressure, the shape and size of Zn nanodots, which are presented by scanning electron microscopy (SEM), are systematically investigated in a controlled way. In order to apply these Zn nanodots to a Flash-type nonvolatile memory (NVM), the capacitance–voltage (CV) characteristics of Zn nanodots are also shown in this paper.
- Japan Society of Applied Physicsの論文
- 2006-05-25
著者
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Lim Koeng
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Kwak Joonghwan
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Kim Sangsoo
Department Of Bioinformatics Soongsil University
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Bang Keein
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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Lim Koeng
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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Kwak Joonghwan
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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Kim Sangsoo
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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