Evaluation of Ultrathin Si Growth Layer on W, Mo, and Ta Surfaces with In Situ Field Emission and Field Ion Microscopies

スポンサーリンク

概要

• 論文の詳細を見る

• Ultrathin Si films vapor-deposited onto W, Mo and Ta surfaces and Si-metal interface properties have been evaluated with microscopic-capability in situ field emission and field ion microscopies (FEM-FIM). Work functions of W, Mo, and Ta substrates covered with a Si monolayer were found to be 4.8 eV, 4.6 eV and 4.5 eV, respectively. The Si monolayer adatoms deposited onto the W and Mo surfaces at around 50 K are field-desorbed at voltages greater than 0.9V_0 (V_0: evaporation voltage of substrate). The clean surfaces of the W and Mo substrates finally appeared at V/V_0=0.96-0.98, and the Si films were found to be desorbed without defects or disturbance of the substrate atomic structure. Silicon-metal intermixing was therefore not detected in the case of Si vapor deposition at around 50 K. The dynamical behavior of Si atoms due to thermal annealing was also examined.

• 社団法人応用物理学会の論文
• 1995-10-15

著者

• Okuno Kimio

  Department Of Electric Electronics And Computer Science Technology Nagasaki Institute Of Applied Sci

• Okuno Kimio

  Department Of Electrical Engineering Nagasaki Institute Of Applied Science

• Okuno Kimio

  Department of Electric and Electronics Engineering, Nagasaki Institute of Applied Science, Nagasaki 851-0119, Japan

関連論文

• Hydrogen Diluted Methane Plasma Gas–Substrate Metal Interaction
• Field-Ion Microscopic Observation of Surface Silicide Formation and Substrate Metal Interfaces
• Evaluation of Ultrathin Si Growth Layer on W, Mo, and Ta Surfaces with In Situ Field Emission and Field Ion Microscopies

スポンサーリンク