The Noise Reduction Effect of the Amplified Metal Oxide Semiconductor Imager

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Taketoshi Kazuhisa

  Department Of Electrical Engineering Faculty Of Engineering Kokushikan University

• Taketoshi Kazuhisa

  Department Of Electrical Engineering Kokushikan University

• Taketoshi Kazuhisa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering

• ANDOH Fumihiko

  NHK Science and Technical Research Laboratories

• TANIWAKI Ryozo

  NHK Science and Technical Research Lab.

• ARAKI Shuichi

  Olympus Optical Co. Ltd.

• Andoh Fumihiko

  Nhk Science And Technical Research Lab.

関連論文

• Analysis of the Correlative Characteristics between Adjacent Pixels of Amplified Metal Oxide Semiconductor Imager by a New-Type Least Squares Method
• Study of Ring-to-chain Structural Change of Evaporated Amorphous Selenium by Reverse Monte Carlo Simulation
• Development of an Electron Diffractometer Using an Electron-bombarded Amplified MOS Imager
• Structural Studies on Silicon Ditelluride (SiTe_2)
• Magnifying Depth Lengths Using Oval Dome Screens
• Structural Study on Amorphous Tellurium Using Reverse Monte Carlo Simulation
• Development of a Novel Evaporator Using a Source Electrode with a Liquid Contact Exchangeable via a Pre-Evacuation Chamber
• Half-Open Dual-Dome Screen System
• The Noise Reduction Effect of the Amplified Metal Oxide Semiconductor Imager
• Study of Amorphous Gallium Arsenide Films Using a Novel Evaporator with Nondestructive Pickup Image and Electron Diffraction Pattern Investigations
• Analyses of Noise in a Highly Sensitive Image Device

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