Dependence of Photoluminescence of Porous Silicon on Angle of Radiation

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概要

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• Brightness of UV-excited porous silicon has been measured as a function of angle of radiation. It is revealed that the variation of brightness of porous silicon with angle of radiation completely violates Lambert's law of cosine. The origin of this property is discussed in relation to surface morphology.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• Kimura Tatsuya

  College Of Engineering Tokyo Denki University

• Nishida Hidekuni

  College of Engineering, Tokyo Denki University

• Terui Syusuke

  College of Engineering, Tokyo Denki University

• Suzuki Takeo

  College of Engineering, Tokyo Denki University

• Terui Syusuke

  College Of Engineering Tokyo Denki University

• Nishida Hidekuni

  College Of Engineering Tokyo Denki University

• Suzuki Takeo

  College Of Engineering Tokyo Denki University

関連論文

• Dependence of Photoluminescence of Porous Silicon on Angle of Radiation
• Light Waveform in Time Domain and Relaxation Mechanism of ZnS:Cu,Br Dispersive Electroluminescent Devices

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