Constant Voltage Trimming of Heavily Doped Polysilicon Resistors

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概要

• 論文の詳細を見る

• Constant voltage trimming (CVT) characteristics of heavily doped polysilicon resistors are analyzed using the melting-segregation model which has already been proposed to explain the mechanism of constant current trimming (CCT). The stability of CVT is found to be ensured by the exsistence of grain resistance in polysilicon which plays no role in CCT. The theoretical expression for CVT characteristics derived from the melting-segregation model, modified by the temperature dependence of grain resistance, agrees well with experimental data.

• 社団法人応用物理学会の論文
• 1995-01-15

著者

• Kato Kotaro

  Lsi Laboratories Nippon Telegraph And Telephone Corporation

• Ono Terukazu

  Lsi Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• Change in Temperature Coefficient of Resistance of Heavily Doped Polysilicon Resistors Caused by Electrical Trimming
• Constant Voltage Trimming of Heavily Doped Polysilicon Resistors

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