Change in Temperature Coefficient of Resistance of Heavily Doped Polysilicon Resistors Caused by Electrical Trimming

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概要

• 論文の詳細を見る

• The change in the temperature coefficient of resistance (TCR) of heavily doped polysilicon resistors caused by electrical trimming has been analyzed based on the melting-segregation model. The model reveals that the TCR of the boundary layers in a polysilicon resistor changes with trimming while that of grains remains the same. The theoretical expression for the change in the TCR of polysilicon resistors agrees well with the wide range of experimental data. The structures of the boundary layers and grains are discussed from the viewpoint of the TCR.

• 社団法人応用物理学会の論文
• 1996-08-15

著者

• Kato Kotaro

  Lsi Laboratories Nippon Telegraph And Telephone Corporation

• ONO Terukazu

  LSI Laboratories, Nippon Telegraph and Telephone Corporation

関連論文

• Change in Temperature Coefficient of Resistance of Heavily Doped Polysilicon Resistors Caused by Electrical Trimming
• Constant Voltage Trimming of Heavily Doped Polysilicon Resistors

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