Photorefractive Effect in Bi_4Ge_3O_<12> (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
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The photorefractive effect in Bi_4Ge_3O_<12> and its incident laser power and temperature dependence are studied. From these measurements, a very small photoinduced refractive index change, Δn=1.2×10^<-6> (E_a=2.5 kV/cm, I=97 mW/cm^2), is observed. The response times (the rise time and the decay time) show the sublinear intensity dependence as well as the photocurrent. The rise time and the decay time under illumination are in the range of 10-100 s. The decay time data are analyzed as double exponential curves, suggesting two types of charge-carrier dynamics contributions to the photorefractive effect.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Kamada Osamu
Department Of Electronic Engineering Polytechnic University
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Kamada Osamu
Department Of Applied Physics Osaka City University
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