Electro-Optical Effect of Bi_4Ge_3O_<12> Crystals for Optical Voltage Sensors

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概要

• 論文の詳細を見る

• The electro-optical coefficient r_<41> of Bi_4Ge_3O_<12>, corresponding to the sensitivity of the optical voltage sensor, and the temperature dependence of response characteristics to applied step voltage are studied. From these measurements, two kinds of dc drift are found to exist in Bi_4Ge_3O_<12> crystals. One is found to be due to the relaxation of the piezoelectric polarization (type (a)), and the other is explained as the deduction phenomenon by the thermally induced space-charge field (type (b)). By correcting for do drift of type (a), the accurate value of r_<41>=1.09×10^<-12> m/V is obtained at 855 nm wavelength.

• 社団法人応用物理学会の論文
• 1993-09-30

著者

• Kamada O

  Polytechnic Univ. Kanagawa Jpn

• Kamada Osamu

  Department Of Applied Physics Osaka City University

• KAKISHITA Kazuhiko

  Department of Electronic Engineering, University of Industrial Technology

• Kakishita Kazuhiko

  Department Of Electronic Engineering University Of Industrial Technology

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