High-Performance In_<0.3> Ga_<0.7>As/In_<0.29> Al_<0.71>As/GaAs Metamorphic High-Electron-Mobility Transistor

概要

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A new high-electron-mobility transistor (HEMT) using InAlAs/InGaAs grown by molecular beam epitaxy on GaAs has been successfully realized. This device, having an In content close to 30%, presents several advantages over conventional pseudomorphic HEMTs on GaAs as well as over lattice matched HEMTs on Ink. High electron mobility with high two-dimensional electron gas density (25000 cm^2/V・s with 3×10^<12> cm^<-2> at 77 K) as well as high Schottky barrier quality (V_b=0.68 V with η=1.1) has been obtained for this material system. A 0.4-μm-gate-length device showed an intrinsic transconductance as high as 700 mS/mm with f_t=45 GHz and f_<max>=115 GHz while a minimum noise figure of NF_<min>=1.1 dB at 18 GHz has been obtained with a 0.2 μm device. This performance is, to the authors' knowledge, the first reported for submicrometer-gate metamorphic InAlAs/InGaAs/GaAs HEMTs.
社団法人応用物理学会の論文
1994-06-15