Noise Modelling in Linear and Nonlinear Devices (Special Issue on TCAD for Semiconductor Industries)

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概要

• 論文の詳細を見る

• This paper presents a review of the techniques and models that can be used for the noise performance calculation of active devices under linear and nonlinear operations. In a first part, the modeling techniques and the noise models of FETs, HEMTs, BJTs and HBTs are described. In the second part, ageneralization of the impedance field method for the noise modeling in devices under nonlinear periodic operation is proposed. This method can be used for the modeling of microwave and millimeter wave mixers and oscillators.

• 1999-06-25

著者

• Cappy A

  Institut D'electronique Et De Microelectronique Du Nord

• Cappy Alain

  Institue D'electronique Et De Microelectronique Du Nord Centre Hyperfrequences Et Semiconducteu

• DANNEVILLE Fransois

  Institut d'Electronique et de Microelectronique du Nord

• DAMBRINE Gilles

  Institut d'Electronique et de Microelectronique du Nord

• TAMEN Beaudouin

  Institut d'Electronique et de Microelectronique du Nord

• Danneville Fransois

  Institut D'electronique Et De Microelectronique Du Nord

• Dambrine Gilles

  Institut D'electronique Et De Microelectronique Du Nord

• Tamen Beaudouin

  Institut D'electronique Et De Microelectronique Du Nord

関連論文

• Noise Modelling in Linear and Nonlinear Devices (Special Issue on TCAD for Semiconductor Industries)
• High-Performance In_ Ga_As/In_ Al_As/GaAs Metamorphic High-Electron-Mobility Transistor

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