Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching

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概要

• 論文の詳細を見る

• The etching of submicronic resist structures in an oxygen plasma has been investigated in a helicon wave reactor. Systematic investigations have been conducted on the structure profile dependences on ion energy and on plasma pressure. For resist etching, the result of these investigations revealed the considerable heat transfer between the plasma species and the substrate. To obtain anisotropically etched resist structures, it was necessary to cool the wafer holder at low temperature (-75℃) and reinforce the thermal conduction between the wafer and wafer holder. Comparison of an anisotropic process, obtained with conventional reactive ion etching (RIE), is made in terms of etch rate, sidewall passivation and surface pollution.

• 社団法人応用物理学会の論文
• 1994-10-15

著者

• Henry Daniel

  Cns Centre National D'etudes Des Telecommunications

• Inard Alain

  Pab

• ETRILLARD Jackie

  France Telecom

• FRANCOU Jean-Marc

  CNET

関連論文

• Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching
• Reactive Ion Etching of Gallium Arsenide in CCl_2F_2 and SiCl_4 Plasmas: Influence of Chamber Material and Etching Mask

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