Reactive Ion Etching of Gallium Arsenide in CCl_2F_2 and SiCl_4 Plasmas: Influence of Chamber Material and Etching Mask

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概要

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• This paper describes the influence of the masking techniques and of the reactor chamber material in reactive ion etching of gallium arsenide in CCl_2F_2 and SiCl_4 plasmas. The etching characteristics are explained by redeposition on surfaces or sidewalls of etched patterns and by interaction with the reactor. Analysis of the etched surfaces by Auger electron spectroscopy (AES) and energy dispersive X-ray spectroscopy (EDX) shows the importance of the masking technique used. Very high-definition GaAs patterning has been performed employing a combination of a SiCl_4 gas at a pressure of 5 mTorr, a pure aluminum cover plate material and a nickel mask. A pending issue remains with the hard sidewall film resulting from the high ion energy necessary to achieve anisotropic etching.

• 社団法人応用物理学会の論文
• 1994-07-15

著者

• ETRILLARD Jackie

  France Telecom

関連論文

• Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching
• Reactive Ion Etching of Gallium Arsenide in CCl_2F_2 and SiCl_4 Plasmas: Influence of Chamber Material and Etching Mask

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