Laser-Induced Reduction of Carrier Activation Energy in Zn-Implanted GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Rossi Marco
Dipartimento Di Energetica University "la Sapienza
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VITALI Gianfranco
Dipartimento di Energetica, University "La Sapienza"
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PIZZUTO Cesare
Dipartimento di Energetica, University "La Sapienza"
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ZOLLO Giuseppe
Dipartimento di Energetica, University "La Sapienza"
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KARPUZOV Dimitry
Institute of Electronics, Bulgarian Academy of Sciences
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KALITZOVA Maria
Institute of Solid State Physics, Bulgarian Academy of Sciences
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Kalitzova Maria
Institute Of Solid State Physics Bulgarian Academy Of Sciences
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Zollo Giuseppe
Dipartimen To Di Energetica Universita' Degli Studi "la Sapienza" Di Roma And Infm -u
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Pizzuto Cesare
Dipartimen To Di Energetica Universita' Degli Studi "la Sapienza" Di Roma And Infm -u
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Vitali G
Dipartimen To Di Energetica Universita' Degli Studi "la Sapienza" Di Roma And Infm -u
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Vitali Gianfranco
Dipartimen To Di Energetica Universita' Degli Studi "la Sapienza" Di Roma And Infm -u
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Karpuzov Dimitry
Institute Of Electronics Bulgarian Academy Of Sciences
関連論文
- NORADRENERGIC INNERVATION OF THE SUPERIOR MESENTERIC ARTERY IN STREPTOZOTOCIN-DIABETIC RATS
- Laser-Induced Reduction of Carrier Activation Energy in Zn-Implanted GaAs
- High Voltage Transmission Electron Microscopy of Low Power Pulsed Laser Annealing of Zn^+ Implanted GaAs
- Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pub+ and Bi+ Ions : Semiconductors
- Low-Power Pulsed-Laser Annealing of the Damaged Surface Layer of Chemomechanically Polished CdS
- Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs
- Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pb+ and Bi+ Ions