Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-07-15

著者

• VITALI Gianfranco

  Dipartimento di Energetica, University "La Sapienza"

• Vitali Gianfranco

  Dipartimento Di Energetica Universita La Sapienza

関連論文

• Laser-Induced Reduction of Carrier Activation Energy in Zn-Implanted GaAs
• High Voltage Transmission Electron Microscopy of Low Power Pulsed Laser Annealing of Zn^+ Implanted GaAs
• Ion-Beam-Assisted Nanocrystal Formation in Silicon Implanted with High Doses of Pub+ and Bi+ Ions : Semiconductors
• Low-Power Pulsed-Laser Annealing of the Damaged Surface Layer of Chemomechanically Polished CdS
• Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs

スポンサーリンク