Analytical DC Model for a-Si:H Thin-Film Transistors Using Effective Temperature Approach

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概要

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• In this paper, we present an analytical dc model for a-Si:H thin-film transistors considering deep and tail states simultaneously. Using an effective temperature approach, the localized deep and tail states have been considered in the dc model such that no approximations are needed. As verified by the published data, this analytical dc model provides an accurate prediction of the drain current characteristics of an a-Si:H thin-film transistor.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Chen S‐s

  National Taiwan Univ. Taipei Twn

• Kuo James

  Rm. 338 Department Of Electrical Engineering National Taiwan University

• CHEN Shiao-Shien

  Rm. 338, Department of Electrical Engineering, National Taiwan University

関連論文

• Analytical Threshold Voltage Formula Including Narrow-Channel Effects for VLSI Mesa-Isolated Fully Depleted Ultrathin Silicon-On-Insulator N-Channel Metal-Oxide-Silicon Devices
• Analytical DC Model for a-Si:H Thin-Film Transistors Using Effective Temperature Approach

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